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lt5520 1 5520f applicatio s u features descriptio u typical applicatio u wide rf output frequency range: 1.3ghzto 2.3ghz 15.9dbm typical input ip3 at 1.9ghz on-chip rf output transformer no external lo or rf matching required single-ended lo and rf operation integrated lo buffer: ?dbm drive level low lo to rf leakage: 41dbm typical wide if frequency range: dc to 400mhz enable function with low off-state leakage current single 5v supply small 16-lead qfn plastic package wireless infrastructure cable downlink infrastructure point-to-point data communications high linearity frequency conversion 1.3ghz to 2.3ghz high linearity upconverting mixer the lt 5520 mixer is designed to meet the high linearity requirements of wireless and cable infrastructure trans-mission applications. a high-speed, internally matched, lo amplifier drives a double-balanced mixer core, allow- ing the use of a low power, single-ended lo source. an rf output transformer is integrated, thus eliminating the need for external matching components at the rf output, while reducing system cost, component count, board area and system-level variations. the if port can be easily matched to a broad range of frequencies for use in many different applications. the lt5520 mixer delivers 15.9dbm typical input 3rd order intercept point at 1.9ghz with if input signal levels of ?0dbm. the input 1db compression point is typically 4dbm. the ic requires only a single 5v supply. , ltc and lt are registered trademarks of linear technology corporation. figure 1. frequency conversion in wireless infrastructure transmitter rf output power and output im3 vs if input power (two input tones) if + if lo lo + rf + rf pa lo input ?dbm bias en v cc1 v cc2 v cc3 5v dc 5520 f01 bpf bpf gnd if input 4:1 220pf220pf 15pf 100 100 (optional) 1 f 1000pf 39nh rfoutput 10pf 5pf 5pf 85 lt5520 if input power (dbm/tone) ?6 p out , im3 (dbm/tone) 10 0 ?0?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 0 5520 ?f01b ?2 ? ? 4 p lo = ?dbm f lo = 1760mhz f if1 = 140mhz f if2 = 141mhz f rf = 1900mhz t a = 25 c p out im3 downloaded from: http:///
lt5520 2 5520f supply voltage ....................................................... 5.5v enable voltage ............................. 0.3v to (v cc + 0.3v) lo input power (differential) .............................. 10dbm rf + to rf differential dc voltage...................... 0.13v rf output dc common mode voltage ......... ?v to v cc if input power (differential) ............................... 10dbm if + , if dc currents .............................................. 25ma lo + to lo differential dc voltage .......................... 1v lo input dc common mode voltage ............ ?v to v cc operating temperature range .................40 c to 85 c storage temperature range ................. 65 c to 125 c junction temperature (t j ).................................... 125 c order part number uf part marking t jmax = 125 c, q ja = 37 c/w 5520 lt5520euf absolute axi u rati gs w ww u package/order i for atio uu w (note 1) electrical characteristics consult ltc marketing for parts specified with wider operating temperature ranges. 16 15 14 13 5 6 7 8 top view uf package 16-lead (4mm 4mm) plastic qfn exposed pad is gnd (pin 17), must be soldered to pcb 9 10 11 12 4 3 2 1 en v cc1 v cc2 v cc3 gnd if + if gnd gndrf + rf gnd gndlo lo + gnd 17 dc electrical characteristics parameter conditions min typ max units if input frequency range dc to 400 mhz lo input frequency range 900 to 2700 mhz rf output frequency range 1300 to 2300 mhz 1900mhz application: v cc = 5v dc , en = high, t a = 25 c, if input = 140mhz at ?0dbm, lo input = 1.76ghz at ?dbm, rf output measured at 1900mhz, unless otherwise noted. test circuit shown in figure 2. (notes 2, 3) parameter conditions min typ max units if input return loss z o = 50 w , with external matching 20 db lo input return loss z o = 50 w 16 db rf output return loss z o = 50 w 20 db lo input power ?0 to 0 dbm conversion gain ? db input 3rd order intercept ?0dbm/tone, d f = 1mhz 15.9 dbm input 2nd order intercept ?0dbm, single-tone 45 dbm lo to rf leakage 41 dbm lo to if leakage 35 dbm input 1db compression 4 dbm if common mode voltage internally biased 1.77 v dc noise figure single side band 15 db (test circuit shown in figure 2) v cc = 5v dc , en = high , t a = 25 c (note 3), unless otherwise noted. parameter conditions min typ max units enable (en) low = off, high = on turn-on time (note 4) 2 m s turn-off time (note 4) 6 m s input current v enable = 5v dc 11 0 m a downloaded from: http:///
lt5520 3 5520f rf output frequency (mhz) 1300 1300 gain, nf (db) 1816 14 12 10 86 4 2 0 ? ? 2300 2100 5520 ?go3 1500 1700 1900 2500 rf output frequency (mhz) 1500 2300 1700 1900 2100 2500 rf output frequency (mhz) 1300 1500 2300 1700 1900 2100 2500 iip3 (dbm) 3230 28 26 24 22 20 18 16 14 12 5520 ?go4 lo leakage (dbm) ?0?0 ?0 ?0 ?0 ?0 5520 ?go5 supply voltage (v) 4.0 4.25 supply current (ma) 4.5 5.0 4.75 5.25 5.5 4.0 4.25 4.5 5.0 4.75 5.25 5.5 5520 ?go1 6664 62 60 58 56 54 52 50 supply voltage (v) shutdown current ( a) 5520 ?go2 1.00.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 t a = 40 c t a = 85 c t a = 25 c high side lo high side lo high side lo high side lo low side and high side lo low side lo low side lo low side lo low side lo ssb nf gain iip2 iip3 5550 45 40 35 30 25 20 15 10 5 iip2 (dbm) t a = 85 c t a = 25 c t a = 40 c (test circuit shown in figure 2) v cc = 5v dc , en = high , t a = 25 c (note 3), unless otherwise noted. note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired.note 2: external components on the final test circuit are optimized for operation at f rf = 1900mhz, f lo = 1.76ghz and f if = 140mhz. note 3: specifications over the 40 c to 85 c temperature range are assured by design, characterization and correlation with statistical processcontrols. note 4: turn-on and turn-off times are based on the rise and fall times of the rf output envelope from full power to 40dbm with an if input power of ?0dbm. typical perfor a ce characteristics uw supply currentvs supply voltage shutdown currentvs supply voltage parameter conditions min typ max units enable = high (on) 3v dc enable = low (off) 0.5 v dc power supply requirements (v cc ) supply voltage 4.5 to 5.25 v dc supply current v cc = 5v dc 60 70 ma shutdown current en = low 1 100 m a conversion gain and ssb noisefigure vs rf output frequency iip3 and iip2vs rf output frequency lo-rf leakagevs rf output frequency v cc = 5v dc , en = high, t a = 25 c, if input = 140mhz at ?0dbm, lo input = 1.76ghz at ?dbm, rf output measured at 1900mhz, unless otherwise noted. for 2-tone inputs: 2nd if input = 141mhz at ?0dbm. (test circuit shown in figure 2.) (test circuit shown in figure 2) dc electrical characteristics downloaded from: http:///
lt5520 4 5520f lo input power (dbm) gain (db) 1614 12 10 86 4 2 0 ?? ?6 ?2 5520 ?g06 ? 4 0 ? lo input power (dbm) ?6 ?2 ? 04 ? lo input power (dbm) ?6 ?2 ? 04 ? if input power (dbm/tone) ?6 ?2 ? 04 ? if input power (dbm/tone) ?6 ?2 ? 04 ? iip3, iip2 (dbm) 5045 40 35 30 25 20 15 10 50 5520 ?g07 lo input power (dbm) ?6 ?2 ? 04 ? lo leakage (dbm) ?0?0 ?0 ?0 ?0 ?0 5520 ?g08 iip3, iip2 (dbm) 5045 40 35 30 25 20 15 10 50 87 6 5 4 3 2 1 0 ?? 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 5520 ?g09 p out , im3 (dbm/tone) 5520 ?g10 p out , im2 (dbm/tone) 5520 ?g11 gain (db) 4.0 4.25 4.5 5.0 4.75 5.25 5.5 5520 ?g12 43 2 1 0 ?? ? ?? ? supply voltage (v) gain (db) 5520 ?g14 5520 ?g13 im2 t a = 40 c high side lo high side lo low side lo low side lo high side lo high side lo low side lo low side and high side lo low side lo ssb nf gain gain t a = 85 c t a = 85 c t a = ?0 c t a = ?0 c iip2iip3 t a = 40 c t a = 85 c t a = 40 c t a = 85 c t a = 40 c t a = 40 c t a = 85 c t a = 85 c t a = 85 c t a = 25 c p out im3 p out frequency (mhz) 0 return loss (db) 0 ? ?0 ?5 ?0 ?5 500 1000 1500 2000 2500 3000 if port rf port lo port 2018 16 14 12 10 8 6 4 2 0 nf (db) 5045 40 35 30 25 20 15 10 5 0 iip3, iip2 (dbm) t a = 25 c t a = 25 c t a = 85 c iip2 iip3 t a = 25 c, t a = 40 c t a = 85 c t a = 25 c t a = 85 c t a = 25 c t a = 25 c t a = 25 c t a = 25 c t a = 40 c 10 0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 if input power (dbm) ?6 ?2 ? 04 ? t a = 40 c iip2iip3 conversion gain and ssb noisefigure vs lo input power iip3 and iip2 vslo input power lo-rf leakagevs lo input power iip3 and iip2 vslo input power rf output power and output im3 vsif input power (two input tones) typical perfor a ce characteristics uw conversion gain vs if inputpower (one input tone) conversion gain, iip3 and iip2vs supply voltage v cc = 5v dc , en = high , t a = 25 c, if input = 140mhz at ?0dbm, lo input = 1.76ghz at ?dbm, rf output measured at 1900mhz, unless otherwise noted. for 2-tone inputs: 2nd if input = 141mhz at ?0dbm. (test circuit shown in figure 2.) if, lo and rf port return lossvs frequency rf output power and output im2 vsif input power (two input tones) downloaded from: http:///
lt5520 5 5520f uu u pi fu ctio s gnd (pins 1, 4, 9, 12, 13, 16): internal grounds. these pins are used to improve isolation and are not intended asdc or rf grounds for the ic. connect these pins to low impedance grounds for best performance. if + , if ? (pins 2, 3): differential if signal inputs. a differ- ential signal must be applied to these pins through dcblocking capacitors. the pins must be connected to ground with 100 w resistors (the grounds must each be capable of sinking about 18ma). for best lo leakage performance,these pins should be dc isolated from each other. an impedance transformation is required to match the if input to the desired source impedance (typically 50 w or 75 w ). en (pin 5): enable pin. when the applied voltage is greater than 3v, the ic is enabled. when the applied voltage is lessthan 0.5v, the ic is disabled and the dc current drops to about 1 m a. v cc1 (pin 6): power supply pin for the bias circuits. typical current consumption is about 2ma. this pinshould be externally connected to v cc and have appropri- ate rf bypass capacitors.v cc2 (pin 7): power supply pin for the lo buffer circuits. typical current consumption is about 22ma. this pinshould have appropriate rf bypass capacitors as shown in figure 2. the 1000pf capacitor should be located asclose to the pins as possible. v cc3 (pin 8): power supply pin for the internal mixer. typical current consumption is about 36ma. this pinshould be externally connected to v cc through an induc- tor. a 39nh inductor is used in figure 2, though the valueis not critical. rf , rf + (pins 10, 11): differential rf outputs. one pin may be dc connected to a low impedance ground to realizea 50 w single-ended output. no external matching compo- nents are required. a dc voltage should not be appliedacross these pins, as they are internally connected through a transformer winding. lo + , lo (pins 14, 15): differential local oscillator in- puts. the lt5520 works well with a single-ended sourcedriving the lo + pin and the lo pin connected to a low impedance ground. no external matching components arerequired. an internal resistor is connected across these pins; therefore, a dc voltage should not be applied across the inputs. ground (pin 17, exposed pad): dc and rf ground return for the entire ic. this must be soldered to theprinted circuit board low impedance ground plane. block diagra w if + if lo lo + rf + rf bias en v cc1 v cc2 v cc3 5520 bd 15 16 13 8 6 5 17 12 11 10 9 7 1 2 3 4 14 gnd gnd gnd gnd gnd gnd double-balanced mixer high speed lo buffer backside ground 10pf 5pf5pf 85 downloaded from: http:///
lt5520 6 5520f test circuit figure 2. test schematic for the lt5520 ref des value size part number c1, c2 220pf 0402 avx 04023c221kat2a c3 15pf 0402 avx 04023a150kat2a c4 1000pf 0402 avx 04023a102kat2a c5 1 m f 0603 taiyo yuden lmk107bj105ma l1 39nh 0402 toko ll1005-fh39nj r1, r2 100 w , 0.1% 0603 irc pfc-w0603r-03-10r1-b t1 4:1 sm-22 m/a-com etc4-1-2 applicatio s i for atio wu u u the lt5520 consists of a double-balanced mixer, a high-performance lo buffer, and bias/enable circuits. the rf and lo ports may be driven differentially; however, they are intended to be used in single-ended mode by connect- ing one input of each pair to ground. the if input ports must be dc-isolated from the source and driven differen- tially. the if input should be impedance-matched for the desired input frequency. the lo input has an internal broadband 50 w match with return loss better than 10db at frequencies up to 3000mhz. the rf output band rangesfrom 1300mhz to 2300mhz, with an internal rf trans- former providing a 50 w impedance match across the band. low side or high side lo injection can be used.if input port the if inputs are connected to the emitters of the double- balanced mixer transistors, as shown in figure 3. these pins are internally biased and an external resistor must be connected from each if pin to ground to set the current through the mixer core. the circuit has been optimized to work with 100 w resistors, which will result in approxi- mately 18ma of dc current per side. for best lo leakageperformance, the resistors should be well matched; thus resistors with 0.1%, tolerance are recommended. if loleakage is not a concern, then lesser tolerance resistors can be used. the symmetry of the layout is also important for achieving optimum lo isolation. the capacitors shown in figure 3, c1 and c2, serve two purposes. they provide dc isolation between the if + and if ports, thus preventing dc interactions that could cause unpredictable variations in lo leakage. they alsoimprove the impedance match by canceling excess induc- tance in the package and transformer. the input capacitor value required to realize an impedance match at desired frequency, f, can be estimated as follows: cc fl l in ext 12 2 1 2 == p+ ()( ) where; f is in units of hz, l in and l ext are in h, and c1, c2 are in farad. l in is the differential input inductance of the lt5520, and is approximately 1.67nh. l ext represents the combined inductances of differential external compo-nents and transmission lines. for the evaluation board shown in figure 10, l ext = 4.21nh. thus, for f = 140mhz, the above formula gives c1 = c2 = 220pf. r2 r1 c1 c2 c3 en en c4 c5 v cc rf out 1900mhz lo in 1760mhz if in 140mhz if + if lo lo + rf + rf v cc1 v cc2 v cc3 gnd gndgnd gnd gndgnd lt5520 t1 16 15 14 13 1211 10 9 8 7 6 5 3 2 1 4 5 4 3 2 1 5520 tc01 er = 4.4 rfgnd dc gnd 0.018"0.018" 0.062" l1 downloaded from: http:///
lt5520 7 5520f table 1 lists the differential if input impedance and reflec-tion coefficient for several frequencies. a 4:1 balun can be used to transform the impedance up to about 50 w . table 1. if input differential impedance frequency differential input differential s11 (mhz) impedance mag angle 10 10.1 + j0.117 0.663 180 44 10.1 + j0.476 0.663 179 70 10.1 + j0.751 0.663 178 140 10.2 + j1.47 0.663 177 170 10.2 + j1.78 0.663 176 240 10.2 + j2.53 0.663 174 360 10.2 + j3.81 0.663 171 500 10.2 + j5.31 0.663 167 lo input portthe simplified circuit for the lo buffer input is shown in figure 4. the lo buffer amplifier consists of high-speed limiting differential amplifiers, optimized to drive the mixer quad for high linearity. the lo + and lo ports can be driven differentially; however, they are intended to bedriven by a single-ended source. an internal resistor connected across the lo + and lo inputs provides a broadband 50 w impedance match. because of the resis- tive match, a dc voltage at the lo input is not recom-mended. if the lo signal source output is not ac coupled, then a dc blocking capacitor should be used at the lo input. figure 3. if input with external matching c1 c2 c3 if in 50 t1 4:1 2 3 100 0.1% 100 0.1% v cc 18ma 18ma 5520 f03 lt5520 lo in 50 14 15 v cc 5520 f04 85 lo lo + 5pf5pf 220 220 lt5520 figure 4. lo input circuit though the lo input is internally 50 w matched, there may be some cases, particularly at higher frequencies or withdifferent source impedances, where a further optimized match is desired. table 2 includes the single -ended input impedance and reflection coefficient vs frequency for the lo input for use in such cases. table 2. single-ended lo input impedance frequency input s11 (mhz) impedance mag angle 1300 62.8 ? j9.14 0.139 30.9 1500 62.2 ? j11.4 0.148 37.1 1700 61.5 ? j13.4 0.157 42.4 1900 60.0 ? j15.2 0.164 48.9 2100 58.4 ? j16.9 0.172 54.7 2300 56.5 ? j17.9 0.176 60.4 2500 54.9 ? j18.8 0.182 65.1 2700 53.7 ? j18.8 0.182 68.5 rf output portan internal rf transformer, shown in figure 5, reduces the mixer-core impedance to provide an impedance of 50 w across the rf + and rf pins. the lt5520 is designed and tested with the outputs configured for single-ended opera-tion, as shown in the figure 5; however, the outputs can be used differentially as well. a center-tap in the transformer provides the dc connection to the mixer core and the transformer provides dc isolation at the rf output. the rf + and rf pins are connected together through the secondary windings of the transformer, thus a dc voltageshould not be applied across these pins. applicatio s i for atio wu u u downloaded from: http:///
lt5520 8 5520f applicatio s i for atio wu u u figure 5. rf output circuit rf out 50 11 10 v cc v cc 5520 f05 rf rf + 8 lt5520 the impedance data for the rf output, listed in table 3, canbe used to develop matching networks for different load impedances. table 3. single-ended rf output impedance frequency input s11 (mhz) impedance mag angle 1300 26.9 + j38.2 0.520 94.7 1500 44.2 + j35.7 0.359 78.4 1700 53.9 + j20.6 0.198 68.0 1900 49.5 + j7.97 0.080 88.9 2100 42.8 + j4.14 0.089 148 2300 38.9 + j5.41 0.139 151 2500 38.7 + j7.78 0.154 140 2700 41.1 ? j9.51 0.142 127 operation at different input frequencieson the evaluation board shown in figure 10, the input of the lt5520 can be easily matched for different frequencies by changing the input capacitors, c1 and c2. table 4 lists some actual values used at selected frequencies. table 4. input capacitor values vs frequency frequency capacitance (c1, c2) (mhz) (pf) 70 820 140 220 240 68 480 18 650 12 the performance was evaluated with the input tuned foreach of these frequencies and the results are summarized in figures 6-8. the same if input balun transformer was used for all measurements. in each case, the lo input frequency was adjusted to maintain an rf output fre- quency of 1900 mhz. figure 6. conversion gain and iip3 vs tuned if input frequency input frequency (mhz) 0 gain (db) 54 3 2 1 0 ? ?? ? ? iip3 (dbm) 2018 16 14 12 10 8 6 4 2 0 200 400 500 5520 f06 100 300 600 700 iip3 gain low side lo low side lo high side lo high side lo figure 7. ssb noise figure vs tuned if input frequency input frequency (mhz) 0 nf (db) 1817 16 15 14 13 200 400 500 5520 f07 100 300 600 700 low side lo high side lo p lo = 0dbm p lo = ?dbm downloaded from: http:///
lt5520 9 5520f figure 8. iip2 vs tuned if input frequency figure 9. conversion gain and return loss vs output frequency input frequency (mhz) 0 iip2 (dbm) 6050 40 30 20 10 0 300 500 5520 f08 100 200 400 600 700 low side lo high side lo frequency (mhz) 1200 gain (db) return loss (db) 1400 1600 1800 2000 5520 f09 2200 10 ?? ? ? ?? ? ? ? 0? ?0 ?5 ?0 ?5 2400 c out = 3.3pf c out = 3.3pf no c out no c out gain return loss figures 6-8 illustrate the performance versus tuned ifinput frequency with both high side and low side lo injection. figure 6 shows the measured conversion gain and iip3. the noise figure is plotted in figure 7 for lo power levels of ?dbm and 0dbm. at lower input frequen- cies, the lo power level has little impact on noise figure. however, for higher frequencies, an increased lo drive level may be utilized to achieve better noise figure. the single-tone iip2 behavior is illustrated in figure 8. low frequency matching of the rf output portwithout any external components on the rf output, the internal transformer of the lt5520 provides a good 50 w impedance match for rf frequencies above approximately1600mhz. at frequencies lower than this, the return loss drops below 10db and degrades the conversion gain. the addition of a single 3.3pf capacitor in series with the rf output improves the match at lower rf frequencies, shifting the 10db return loss point to about 1300mhz, as demonstrated in figure 9. this change also results in an improvement of the conversion gain, as shown in figure 9. applicatio s i for atio wu u u downloaded from: http:///
lt5520 10 5520f figure 10. evaluation board layout (10a) top layer silkscreen (10b) top layer metal applicatio s i for atio wu u u downloaded from: http:///
lt5520 11 5520f u package descriptio uf package 16-lead plastic qfn (4mm 4mm) (reference ltc dwg # 05-08-1692) 4.00 0.10 (4 sides) note:1. drawing conforms to jedec package outline mo-220 variation (wggc) 2. all dimensions are in millimeters 3. dimensions of exposed pad on bottom of package do not include mold flash. mold flash, if present, shall not exceed 0.15mm on any side 4. exposed pad shall be solder plated pin 1top mark 0.55 0.20 16 15 12 bottom view?xposed pad 2.15 0.10 (4-sides) 0.75 0.05 r = 0.115 typ 0.30 0.05 0.65 bsc 0.200 ref 0.00 ?0.05 (uf) qfn 0802 recommended solder pad pitch and dimensions 0.72 0.05 0.30 0.05 0.65 bcs 2.15 0.05 (4 sides) 2.90 0.05 4.35 0.05 package outline information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen-tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. downloaded from: http:///
lt5520 12 5520f linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com ? linear technology corporation 2003 lt/tp 1103 1k ? printed in usa related parts part number description comments infrastructure lt5511 high signal level upconverting mixer rf output to 3ghz, 17dbm iip3, integrated lo buffer lt5512 dc-3ghz high signal level downconverting mixer rf input to 3ghz, 20dbm iip3, integrated lo buffer lt5515 1.5ghz to 2.5ghz direct conversion quadrature demodulator 20dbm iip3,integrated lo quadrature generator lt5516 0.8ghz to 1.5ghz direct conversion quadrature demodulator 21.5dbm iip3,integrated lo quadrature generator lt5522 600mhz to 2.7ghz high signal level downconverting mixer 4.5v to 5.25v supply, 25dbm iip3 at 900mhz, nf = 12.5db, 50 w single-ended rf and lo ports rf power detectors lt5504 800mhz to 2.7ghz rf measuring receiver 80db dynamic range, temperature compensated, 2.7v to 6v supply ltc5505 rf power detectors with >40db dynamic range 300mhz to 3ghz, temperature compensated, 2.7v to 5.5v supply ltc5507 100khz to 1000mhz rf power detector 300mhz to 3ghz, temperature compensated, 2.7v to 5.5v supply ltc5508 300mhz to 7ghz rf power detector 44db dynamic range, temperature compensated, sc70 package ltc5509 300mhz to 3ghz rf power detector 36db dynamic range, temperature compensated, sc70 package ltc5532 300mhz to 7ghz precision rf power detector precision v out offset control, adjustable gain and offset rf receiver building blocks lt5500 1.8ghz to 2.7ghz receiver front end 1.8v to 5.25v supply, dual-gain lna, mixer lo buffer lt5502 400mhz quadrature if demodulator with rssi 1.8v to 5.25v supply, 70mhz to 400mhz if, 84db limiting gain, 90db rssi range lt5503 1.2ghz to 2.7ghz direct iq modulator and 1.8v to 5.25v supply, four-step rf power control, upconverting mixer 120mhz modulation bandwidth lt5506 500mhz quadrature if demodulator with vga 1.8v to 5.25v supply, 40mhz to 500mhz if, ?db to 57db linear power gain, 8.8mhz baseband bandwidth lt5546 500mhz ouadrature if demodulator with 1.8v to 5.25v supply, 40mhz to 500mhz if, vga and 17mhz baseband bandwidth ?db to 56db linear power gain downloaded from: http:///

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